Pixel array package structure and display panel

ABSTRACT

A pixel array package structure includes: a substrate; a pixel array disposed on the substrate, in which the pixel array includes a plurality of light emitting diode chips, and the light emitting diode chips include at least one red diode chip, at least one green diode chip, at least one blue diode chip, and a combination thereof; a reflective layer disposed on the substrate and between any two adjacent of the light emitting diode chips; a light-absorbing layer disposed on the reflective layer and surrounding the pixel array; and a light-transmitting layer disposed on the pixel array, the reflective layer, and the light-absorbing layer, in which the light-transmitting layer has an upper surface and a lower surface opposite thereto, and the lower surface is in contact with the pixel array, and the upper surface has a roughness of 0.005 mm to 0.1 mm.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation of U.S. application Ser. No.17/663,431, filed May 15, 2022, which is a Divisional Application of theU.S. application Ser. No. 16/232,041, filed Dec. 25, 2018, now U.S. Pat.No. 11,367,849, issued Jun. 21, 2022, which claims priority to TaiwanApplication Serial Number 107129351, filed Aug. 22, 2018, all of whichare herein incorporated by their entireties.

BACKGROUND Field of Invention

The present disclosure relates to a pixel array package structure and adisplay panel.

Description of Related Art

With rapid advancement of display technology, in addition to aconventional liquid crystal display panel, a display panel uses a RGBlight emitting diode (RGB LED) as a display pixel and a light source.Since the LED has the advantage of low power consumption, the displaypanel using the LED can effectively save the power required by theconventional liquid crystal panel, which can help energy saving, carbonreduction and environmental protection, and thus is expected to become anew potential product in the display technology field. The RGB displaycannot achieve small pitch operations due to process limitations ofsurface mounted devices packaging processes. However, current displaysmove toward development of chip on board packaging processes, such thatsub-millimeter LEDs (mini LEDs) and micro LEDs can achieve small pitchoperations.

In the technique of the three primary color display, in addition to thecolor vividness, there is an index that determines the sharpness of thescreen, that is, the contrast. In the manner of increasing the contrastin a small pitch, in addition to using a black plate as the substrate,light-absorbing particles are added into the encapsulant. Thelight-absorbing particles can not only reduce the influence of thelateral light of the LED but also absorb the light source from outsideto increase the contrast. However, it causes the problem of reducedlight output of the forward light.

In addition, the current large-sized display panel splicing technologyis to stack a plurality of small display panels with each other to forma large-sized display panel. Since there are gaps at the frame of thedisplay panel and between the displays, there is a problem that thescreen is cut and not continuous when the large-sized display paneldisplays, which affects the quality of the display. In order to improvethe above problems, a display panel with a narrow frame has beendeveloped to narrow the gaps between the displays during splicing.However, even if the display panel with the current narrowest frame isused, a certain safety distance should be retained to avoid damagecaused by the mutual pressing of the display panels, so that thelarge-sized display panel still has splicing gaps.

SUMMARY

In view of the above, a purpose of the present disclosure is to providea pixel array package structure and a display panel that can solve theabove problems.

To achieve the above purpose, an aspect of the present disclosureprovides a pixel array package structure including a substrate, a pixelarray, a reflective layer, a light-absorbing layer, and alight-transmitting layer. The pixel array is disposed on the substrate.The pixel array includes a plurality of light emitting diode chips. Thelight emitting diode chips include a red diode chip, a green diode chip,a blue diode chip, and a combination thereof. The reflective layer isdisposed on the substrate and between any two adjacent of the lightemitting diode chips. The light-absorbing layer is embedded in thereflective layer and surrounds the pixel array. The light-transmittinglayer is disposed on the pixel array, the reflective layer, and thelight-absorbing layer. The light-transmitting layer has an upper surfaceand a lower surface opposite thereto. The lower surface is in contactwith the pixel array.

A further aspect of the present disclosure provides a display panelincluding a plurality of sub-display panels. Any two adjacent of thesub-display panels has a splicing gap, in which each of the sub-displaypanels includes a plurality of the pixel array package structuresdescribed above.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the present disclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be more fully understood by reading the followingdetailed description of the embodiment, with reference made to theaccompanying drawings as follows:

FIG. 1A is a microscopic top view of a pixel array package structureaccording to one embodiment of the present disclosure;

FIG. 1B is a partially enlarged schematic view of a region R1 of FIG.1A;

FIG. 1C and FIG. 1D are schematic cross-sectional views taken along lineA-A′ and line B-B′ of FIG. 1B, respectively;

FIGS. 2, 3, 4, and 5 are top views of pixel array package structuresaccording to various embodiments of the present disclosure;

FIG. 6A and FIG. 6B are schematic cross-sectional views taken along lineA-A′ and line B-B′ of FIG. 1B according to another embodiment of thepresent disclosure;

FIG. 7A and FIG. 7B are schematic cross-sectional views taken along lineA-A′ and line B-B′ of FIG. 1B according to a further embodiment of thepresent disclosure;

FIG. 8 is a top view of a pixel array package structure according to avariant embodiment of the present disclosure;

FIG. 9A is a microscopic top view of a pixel array package structureaccording to one embodiment of the present disclosure;

FIG. 9B is a partially enlarged view of a region R2 of FIG. 9A;

FIG. 9C is a schematic cross-sectional view taken along line A-A′ ofFIG. 9B;

FIG. 10A is a top view of a pixel array package structure according toone embodiment of the present disclosure;

FIG. 10B is a schematic cross-sectional view taken along line A-A′ ofFIG. 10A,

FIG. 11 is a graph comparing brightness of pixel array structures of thepresent disclosure with a conventional pixel array structure;

FIG. 12 is a top view of a display panel according to one embodiment ofthe present disclosure; and

FIG. 13 is a partially enlarged view of FIG. 12 .

DETAILED DESCRIPTION

The description of the embodiments of the present disclosure is intendedto be illustrative and not restrictive. The embodiments disclosed in thefollowing may be combined or substituted with each other in anadvantageous situation, and other embodiments may be added to anembodiment without further description or explanation.

In the following description, numerous specific details will bedescribed in detail in order to enable the reader to fully understandthe following embodiments. However, embodiments of the presentdisclosure may be practiced without these specific details. In otherinstances, well-known structures and devices are only schematicallyillustrated in the drawings in order to simplify the drawings.

A purpose of the present disclosure is to provide a pixel array packagestructure. FIG. 1A is a microscopic top view of a pixel array packagestructure according to one embodiment of the present disclosure. FIG. 1Bis a partially enlarged schematic view of a region R1 of FIG. 1A. FIG.1C and FIG. 1D are schematic cross-sectional views taken along line A-A′and line B-B′ of FIG. 1B, respectively.

Referring to FIG. 1B, FIG. 1C and FIG. 1D simultaneously, the pixelarray package structure 10 includes a substrate 110, a pixel array 120,a reflective layer 130, a light-absorbing layer 140, and alight-transmitting layer 150. The pixel array 120 is disposed on thesubstrate 110. Specifically, the pixel array 120 includes a plurality oflight emitting diode (LED) chips 122, 124, and 126. In variousembodiments of the present disclosure, the substrate 110 may be a whitesubstrate or a black substrate. In some embodiments, the substrate 110may include a heat dissipation substrate, a conductive substrate, or aninsulating substrate. In some embodiments, the substrate 110 has acircuit layer thereon, which is configured to electrically connect theLED chips 122, 124, and 126. These LED chips include at least one redLED chip 122, at least one green LED chip 124, at least one blue LEDchip 126, and a combination thereof.

It can be understood that the red LED chip 122 emits red light. In someother embodiments, the red LED chip 122 may also include emitting redlight by exciting a wavelength conversion layer (not shown) by bluelight emitted by the blue LED chip 126. In various examples, thewavelength conversion layer can include one or more red phosphors, redquantum dots, or a mixture thereof. For example, the red phosphormaterial may include nitrides, fluorides and/or manganese (Mn⁴⁺) dopedfluoride phosphors, such as A₂[MF₆]:Mn⁴⁺, in which A is Li⁺, Na⁺, K⁺,Rb⁺, Cs⁺ and/or NH₄ ⁺, and M is Ge, Si, Sn, Ti or Zr.

It can be understood that the green LED chip 124 emits green light. Insome other embodiments, the green LED chip 124 may include emittinggreen light by exciting a wavelength conversion layer (not shown) byblue light emitted by the blue LED chip 126. In various examples, thewavelength conversion layer may include one or more green phosphors,green quantum dots, or a mixture thereof. For example, the greenphosphor may be silicate, LuYAG, and/or B-SiAlON, and the green quantumdots may be CdSe, CdS, CdTe, SInP, InN, AlInN, InGaN, AlGaInN, and/orCuInGaSe. For another example, the green quantum dots may be greenall-inorganic perovskite quantum dots having a chemical formula ofCsPb(Br_(1-b)I_(b))₃ and 0≤b<0.5.

The present disclosure utilizes these LED chips 122, 124, and 126 withdifferent combinations to mix the three primary colors of light (red,green, and blue) to emit white light. For example, as shown in FIG. 1B,the pixel array package structure 10 includes a red LED chip 122, agreen LED chip 124, and a blue LED wafer 126 arranged in a matrix with 3columns and 1 row. In addition, the pixel array package structure 10 mayalso include a red LED chip 122, a green LED chip 124, and a blue LEDchip 126 arranged as shown in FIG. 2 .

For another example, as shown in FIG. 3 , the pixel array packagestructure 10 includes two red LED chips 122, a green LED chip 124, and ablue LED chip 126 arranged in a matrix with 2 columns and 2 rows. Thisdesign can increase color gamut (NTSC or BT. 2020 (Rec. 2020)) of thepixel array package structure 10. In an embodiment, the two red LEDchips 122 may respectively have different wavelength bands for betterred light color rendering effect. In another embodiment, the two red LEDchips 122 may have the same wavelength band but have differentbrightness levels for better modulation in brightness.

For another example, as shown in FIG. 4 , the pixel array packagestructure 10 includes a red LED chip 122, two green LED chips 124, and ablue LED chip 126 arranged in a matrix with 2 columns and 2 rows. Thisdesign can increase the overall brightness of the pixel array packagestructure 10.

For example, as shown in FIG. 5 , the pixel array package structure 10includes a red LED chip 122, a green LED chip 124, a blue LED chip 126,and a white LED chip 128 arranged in a matrix with 2 columns and 2 rows.Since there is a white sub-pixel added in this design, displaybrightness can be improved when a backlight module with a same power isused. In other words, if a same brightness output is required, the powerconsumption of this design will be lower.

In general, if the LEDs of the LED chips 122, 124, and 126 have a grainsize of about 100 μm to 300 μm (for example, 150 μm), those may becalled as sub-millimeter LEDs (mini LEDs). If the LEDs of the LED chips122, 124, and 126 have a grain size of less than 100 μm, those may becalled as micro LEDs. In application, the sub-millimeter LEDs may beapplied to products such as mobile phones, televisions, car panels, andesports notebooks, and the micro LEDs may be applied to fields ofwearable watches, mobile phones, car displays, augmented reality/virtualreality, display screens and televisions.

Returning to FIG. 1C and FIG. 1D, the reflective layer 130 is disposedon the substrate 110 and between any two adjacent of the LED chips 122,124, and 126. In general, the illumination angle of each of the LEDchips 122, 124 or 126 is about 120 to 150 degrees. In order to preventlight emitted by the LED chips 122, 124 and 126 from interfering witheach other or being absorbed, the reflective layer 130 of the presentdisclosure is disposed between any two adjacent of the LED chips. Suchdesign can further enhance luminous efficiency of the pixel arraypackage structure 10. In some embodiments, the reflective layer 130 iscomposed of a mixture of a colloidal material and inorganic particles.For example, the inorganic particles may include titanium dioxide(TiO₂), boron nitride (BN), silicon oxide (SiO₂), barium sulfate (BaSO₄)or aluminum oxide (Al₂O₃). The colloidal material may include polymethylmethacrylate (PMMA), polycarbonate (PC), allyl diglycol carbonate(CR-39), polystyrene (PS), epoxy (epoxy), polyamide, acrylate orsilicone. In one embodiment, the inorganic particles have an averageparticle size (D50) less than 20 μm.

It should be noted that light reflectance of the reflective layer 130depends on the concentration and characteristics of the inorganicparticles in the colloidal material. The higher the concentration of theinorganic particles, the higher the light reflectance of the reflectivelayer 130. The higher the light reflectance of the inorganic particlesthemselves, the higher the light reflectance of the reflective layer130. In some embodiments of the present disclosure, the lightreflectance of the reflective layer 130 should be at least greater thanlight absorption thereof. In other words, the light energy of the lightreflected by the reflective layer 130 should be higher than the lightenergy of the light absorbed by the reflective layer 130, so as to helpimprove the luminous efficiency of the pixel array package structure 10and avoid rise of temperature of the reflective layer 130 due toabsorption of the light energy, which will result in attenuation of theluminous efficiency of the pixel array package structure 10 due to thetemperature effect. In addition, in some preferable embodiments, thelight reflectance of the reflective layer 130 should be greater thanabout 90% to reflect the light emitted by the LED chip 122, 124 or 126as much as possible, and to prevent the light from being absorbed by thereflective layer 130, which will reduce the luminous efficiency of thepixel array package structure 10.

As shown in FIGS. 1C and 1D, in some embodiments, the upper surface 130a of the reflective layer 130 is substantially coplanar with the uppersurface of the pixel array 120. In various embodiments, the reflectivelayer 130 may be formed on the substrate 110 and filled between any twoadjacent of the LED chips 122, 124 and 126 by molding, glue-filling orother suitable processes.

Referring to FIG. 1B, FIG. 1C, and FIG. 1D simultaneously, thelight-absorbing layer 140 is disposed on the reflective layer 130 andsurrounds the pixel array 120. In an embodiment, the lower surface 140 bof the light-absorbing layer 140 is substantially coplanar with theupper surface 120 a of the pixel array 120. In some embodiments, thelight-absorbing layer 140 may cover a portion of the reflective layer130 located on the periphery of the pixel array 120. In otherembodiments, the light-absorbing layer 140 may also fully cover thereflective layer 130 located on the periphery of the pixel array 120.For example, the light-absorbing layer 140 is composed of a colloidalmaterial and an inorganic material. For example, the colloidal materialmay include polymethyl methacrylate (PMMA), polycarbonate (PC), allyldiglycol carbonate (CR-39), polystyrene (PS), epoxy (epoxy), polyamide,acrylate or silicone. In addition, in some embodiments, the inorganicmaterial may be carbon powder or perovskite or the like. In a pluralityof examples, the carbon powder has a specific surface area of 50 m²/g to70 m²/g, such as 52 m²/g, 54 m²/g, 56 m²/g, 58 m²/g, 60 m²/g, 62 m²/g,64 m²/g, 66 m²/g or 68 m²/g. In another example, the light-absorbinglayer 140 may also be composed of a colloidal material and an organicmaterial. For example, the organic material may include blackpigment-added or dye-added polyimide resin, poly-vinyl alcohol resin,and/or acrylate resin. In various embodiments, the light-absorbing layer140 may form a black frame surrounding the pixel array 120 by spincoating and lithography etching or by screen printing.

Referring to FIGS. 1C and 1D, the light-transmitting layer 150 isdisposed on the pixel array 120, the reflective layer 130, and thelight-absorbing layer 140. It should be noted that thelight-transmitting layer 150 has an upper surface 150 a and a lowersurface 150 b opposite thereto, in which the lower surface 150 b is incontact with the pixel array 120, and the upper surface 150 a has aroughness of 0.005 mm to 0.1 mm. In some examples, thelight-transmitting layer 150 may include silicone or a resin. In variousembodiments, the light-transmitting layer 150 may be formed by molding,glue-filling, or other suitable processes. In addition, a rougheningprocess such as sand blasting or surface etching may be performed on theupper surface 150 a of the light-transmitting layer 150. In variousexamples, the roughness of the upper surface 150 a of thelight-transmitting layer 150 may be 0.01 mm, 0.02 mm, 0.03 mm, 0.04 mm,0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, or 0.09 mm. It is assumed that theupper surface 150 a of the light-transmitting layer 150 is a smoothsurface without being roughened, when the pixel array package structure10 is illuminated by an external light source (e.g., sunlight, spotlight or a light source), the viewer will not see the display screenand/or the glare problem is generated.

Continuously referring to FIG. 1C and FIG. 1D, in one embodiment, thepixel array package structure 10 further includes an anti-external lightmaterial 160 disposed on the light-transmitting layer 150. In someembodiments, the anti-external light material 160 may be a polarizer oran anti-reflective coating or the like. In one example, theanti-external light material 160 may be a circular polarizer.

In order to facilitate the comparison with the above embodiments andsimplify the description, the same reference numerals are used todesignate the same elements in the following embodiments, and thedifferences are mainly described for the respective embodiments, andrepeated portions are not described.

FIGS. 6A and 6B are cross-sectional views of a pixel array packagestructure 10 a according to another embodiment of the presentdisclosure, in which FIG. 6A is a schematic cross-sectional view takenalong line A-A′ of FIG. 1B, and FIG. 6B a schematic cross-sectional viewtaken along line B-B′ of FIG. 1B. As shown in FIGS. 6A and 6B, thedifference between the pixel array package structure 10 a illustrated inFIGS. 6A and 6B and the pixel array package structure 10 illustrated inFIGS. 1C and 1D is that the light-absorbing layer 140 of the pixel arraypackage structure 10 a is embedded in the reflective layer 130. In anembodiment, the upper surface 140 a of the light-absorbing layer 140 issubstantially coplanar with the upper surface 120 a of the pixel array120. Specifically, in the embodiment, the reflective layer 130 has afirst portion 130P₁, a second portion 130P₂, and a third portion 130P₃,in which the first portion 130P₁ is located on the periphery of thepixel array 120 and interposed between the substrate 110 and thelight-absorbing layer 140; the second portion 130P₂ is an upwardextension of the first portion 130P₁, which surrounds the pixel array120 and is interposed between the pixel array 120 and thelight-absorbing layer 140; and the third portion 130P₃ is locatedbetween any two adjacent of the LED chips 122, 124 and 126 of the pixelarray 120. It should be noted that in other embodiments, the reflectivelayer 130 may not have the second portion 130P₂, that is, the boundaryof the light-absorbing layer 140 may be in close proximity to theperiphery of the pixel array 120.

FIGS. 7A and 7B are cross-sectional views of a pixel array packagestructure 10 b according to another embodiment of the presentdisclosure, in which FIG. 7A is a schematic cross-sectional view takenalong line A-A′ of FIG. 1B, and FIG. 7B is a schematic cross-sectionalview taken along line B-B′ of FIG. 1B. As shown in FIGS. 7A and 7B, thedifference between the pixel array package structure 10 b illustrated inFIGS. 7A and 7B and the pixel array package structure 10 illustrated inFIGS. 1C and 1D is that the upper surface 140 a of the light-absorbinglayer 140 of the pixel array package structure 10 b is substantiallycoplanar with the upper surface 150 a of the light-transmitting layer150.

In an embodiment, the lower surface 140 b of the light-absorbing layer140 is substantially coplanar with the upper surface 120 a of the pixelarray 120. In an embodiment, the light-transmitting layer 150 may covera portion of the reflective layer 130, that is, the light-absorbinglayer 140 only covers a portion of the reflective layer 130 located atthe periphery of the pixel array 120. In other embodiments, thelight-absorbing layer 140 fully covers the reflective layer 130 locatedat the periphery of the pixel array 120.

FIG. 8 is a top view of a pixel array package structure according to avariant embodiment of the present disclosure. As shown in FIG. 8 , thedifference between the pixel array package structure 20 illustrated inFIG. 8 and the pixel array package structure 10 illustrated in FIG. 1Bis that the pixel array package structure 20 may include a first grouppixel array 120S₁ and a second group pixel array 120S₂, in which each ofthe first group pixel array 120S₁ and the second group pixel array 120S₂includes a red LED chip 122, a green LED chip 124 and a blue LED chip126. The display application usually includes thousands or tens ofthousands of pixel array package structures, and when one of a certaingroup LED chips of a certain pixel array package structure does notilluminate, another group LED chips will continue to operate by suchdesign. It does not have a visual impact on the user and can reducemaintenance costs.

FIG. 9A is a microscopic top view of a pixel array package structure 30according to a variant embodiment of the present disclosure. FIG. 9B isa partially enlarged view of a region R2 of FIG. 9A. FIG. 9C is aschematic cross-sectional view taken along line A-A′ of FIG. 9B. Asshown in FIGS. 9B and 9C, the pixel array package structure 30 includesa substrate 110, a pixel array 120, a light-absorbing layer 140, and alight-transmitting layer 150. Specifically, the pixel array 120 isdisposed on the substrate 110. The pixel array 120 includes a pluralityof LED chips, such as at least one red LED chip 122, at least one greenLED chip 124, at least one blue LED chip 126, and a combination thereof.The light-absorbing layer 140 is disposed on the substrate 110 andsurrounds the pixel array 120. In the present embodiment, the uppersurface of the light-absorbing layer 140 is substantially coplanar withthe upper surface 120 a of the pixel array 120. The light-transmittinglayer 150 is disposed on the light-absorbing layer 140 and the pixelarray 120. The light-transmitting layer 150 has an upper surface 150 aand a lower surface 150 b opposite thereto. The lower surface 150 b ofthe light-transmitting layer 150 is in contact with the pixel array 120and the light-absorbing layer 140, and the upper surface 150 a thereofhas a roughness of 0.005 mm to 0.1 mm. In one embodiment, the pixelarray package structure 30 may further include an anti-external lightmaterial (not shown) disposed on the upper surface 150 a of thelight-transmitting layer 150.

FIG. 10A is a top view of a pixel array package structure 40 accordingto a variant embodiment of the present disclosure. FIG. 10B is aschematic cross-sectional view taken along line A-A′ of FIG. 10A. Asshown in FIGS. 10A and 10B, the pixel array package structure 40includes a substrate 110, a pixel array 120, a light-absorbing layer140, and a light-transmitting layer 150. Specifically, the pixel array120 is disposed on the substrate 110. The pixel array 120 includes aplurality of LED chips, such as at least one red LED chip 122, at leastone green LED chip 124, at least one blue LED chip 126, and acombination thereof. The light-absorbing layer 140 is disposed at bothsides of the pixel array 120. The light-transmitting layer 150 isdisposed between the light-absorbing layers 140 and surrounds the pixelarray 120. In more detail, the light-transmitting layer 150 has a firstportion 150P₁ and a second portion 150P₂, in which the first portion150P₁ is disposed on the pixel array 120, and the second portion 150P₂is disposed beneath the first portion 150P₁ and interposed between thepixel array 120 and the light-absorbing layer 140. In the presentembodiment, a top surface 150T of the light-transmitting layer 150 issubstantially coplanar with the top surface 140T of the light-absorbinglayer 140. In one embodiment, the pixel array package structure 40further includes an anti-external light material (not shown) disposed onthe top surface 150T of the light-transmitting layer 150 and the topsurface 140T of the light-absorbing layer 140.

FIG. 11 is a graph comparing brightness of pixel array structures of thepresent disclosure with a conventional pixel array structure. As shownin FIG. 11 , A represents a pixel array package structure 10, 10 a or 10b of the present disclosure; B represents a pixel array packagestructure 30 of the present disclosure; C represents a pixel arraypackage structure 40 of the present disclosure; and P represents aconventional pixel array structure. It should be noted that a lightabsorbing particles-added light-transmitting layer is used toencapsulate a pixel array of the conventional pixel array structure P.As shown in FIG. 11 , the vertical axis represents brightness measuredwhen a pixel array package structure is illuminated, and the horizontalaxis represents a brightness ratio of an unilluminated pixel arraypackage structure adjacent to the illuminated pixel array packagestructure to the illuminated pixel array package structure. That is, thegreater the brightness of the vertical axis, the greater the luminousintensity of the pixel array package structure. The smaller thebrightness ratio of the horizontal axis, the lower the effect on theunilluminated pixel array package structure from the illuminated pixelarray package structure. The brightness ratio of the pixel array packagestructure of the present disclosure is preferably less than 0.15%. Ascan be seen from FIG. 11 , the brightness of the conventional pixelarray structure P is about 150 cd/m², and the brightness ratio thereofis about 0.267%. The brightness of the pixel array structure A of thepresent disclosure is about 310 cd/m², and the brightness ratio thereofis about 0.14%. The brightness of the pixel array structure B of thepresent disclosure is about 97 cd/m², and the brightness ratio thereofis about 0.036%. The brightness of the pixel array structure C of thepresent disclosure is about 105 cd/m², and the brightness ratio thereofis about 0.013%. Although the brightness ratio of the pixel arraystructures B and C of the present disclosure is much smaller than thebrightness ratio of the pixel array structure A of the presentdisclosure, the brightness of the pixel array structures B and C isrelatively low, and therefore, the pixel array structure A of thepresent disclosure is a preferable embodiment. In addition, compared thepixel array structure A with the conventional pixel array structure P,the brightness and brightness ratio of the pixel array structure A arebetter than those of the conventional pixel array structure P.Therefore, the pixel array structure A of the present disclosure notonly can solve the problem of reduced light output of the forward lightof the conventional pixel array structure P, but also can solve theproblem of poor contrast.

FIG. 12 is a top view of a display panel 200 according to one embodimentof the present disclosure. FIG. 13 is a partially enlarged view of FIG.12 . Referring to FIG. 12 first, the display panel 200 includes aplurality of sub-display panels 210. Specifically, any two adjacent ofthe sub-display panels 210 have a splicing gap D1 therebetween. Invarious embodiments, the splicing gap D1 between the sub-display panels210 is less than 100 μm. For the viewer, the presence of these splicinggaps D1 may cause the display screen to be cut and visuallydiscontinuous.

Referring to FIG. 13 , each of the sub-display panels 210 includes aplurality of pixel array package structures 10 as described above. Inmore detail, in various embodiments, any two adjacent of the pixel arraypackage structures 10 have a pitch D2 therebetween. When the LED chipsin the pixel array package structure 10 are designed as micro LEDs, thepitch D2 between the pixel array package structures 10 is less thanabout 0.5 mm. When the pixel array package structures 10 are designed asmini LEDs, the pitch D2 between the pixel array package structures 10 isabout 0.5 mm to 1.0 mm. In the embodiment of the mini LEDs, the width Wof the light-absorbing layer 140 in the pixel array package structure 10is in a range of 50 μm to 650 μm, such as 100 μm, 150 μm, 200 μm, 250μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, or 600 μm. A singlesub-display panel 210 may include tens of thousands to hundreds ofthousands of the pixel array package structures 10, and any two adjacentof the pixel array package structures 10 have a sub-splicing gap(2W+D2). In the case where the single sub-display panel 210 has beendivided by a plurality of sub-splicing gaps (2W+D2), the splicing gapsD1 between these sub-display panels 210 (indicated in FIG. 12 ) is notobvious to the viewer.

In other embodiments, each of the sub-display panels 210 may alsoinclude a plurality of the pixel array package structures 10 a, 10 b,20, 30 or 40 as described above.

In summary, the various embodiments provided by the present disclosurecan increase the brightness of the LED chips without losing thecontrast. Since the position of lateral light output of the LED chip isencapsulated by an opaque material or a highly reflective material, andthe position of forward light output of the LED chip is encapsulated bya high transmittance material, the problem of low light efficiencyresulting from absorption of the light emitted by the LED by thelight-absorbing particles in the prior art can be improved. In addition,the sub-splicing gaps in the single sub-display panel constituted by thelight-absorbing layer and the pitch of any two adjacent of the pixelarray package structures can make the viewer feel seamlessly splicingvisual effects of the display panel.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A pixel array package structure, comprising: asubstrate; a pixel array disposed on the substrate, wherein the pixelarray comprises a plurality of light emitting diode chips, and the lightemitting diode chips comprise a red diode chip, a green diode chip, ablue diode chip, and a combination thereof; a reflective layer disposedon the substrate and between any two adjacent of the light emittingdiode chips; a light-absorbing layer embedded in the reflective layerand surrounding the pixel array; and a light-transmitting layer disposedon the pixel array, the reflective layer, and the light-absorbing layer,wherein the light-transmitting layer has an upper surface and a lowersurface opposite thereto, and the lower surface is in contact with thepixel array.
 2. The pixel array package structure of claim 1, furthercomprising an anti-external light material disposed on thelight-transmitting layer.
 3. The pixel array package structure of claim2, wherein the anti-external light material is a polarizer.
 4. The pixelarray package structure of claim 1, wherein the reflective layer iscomposed of a mixture of a colloidal material and inorganic particles,wherein the inorganic particles comprise titanium dioxide, boronnitride, silicon dioxide, barium sulfate or aluminum oxide.
 5. The pixelarray package structure of claim 1, wherein an upper surface of thelight-absorbing layer is substantially coplanar with an upper surface ofthe pixel array.
 6. The pixel array package structure of claim 1,wherein the light-absorbing layer is composed of a colloidal materialand an inorganic material, or a colloidal material and an organicmaterial.
 7. The pixel array package structure of claim 6, wherein theinorganic material is carbon powder or perovskite.
 8. The pixel arraypackage structure of claim 7, wherein the carbon powder has a specificsurface area of 50 m²/g to 70 m²/g.
 9. A display panel, comprising: aplurality of sub-display panels, any two adjacent of the sub-displaypanels having a splicing gap, wherein each of the sub-display panelscomprises a plurality of the pixel array package structures of claim 1.10. The display panel of claim 9, further comprising an anti-externallight material disposed on the light-transmitting layer.
 11. The displaypanel of claim 10, wherein the anti-external light material is apolarizer.
 12. The display panel of claim 9, wherein the reflectivelayer is composed of a mixture of a colloidal material and inorganicparticles, wherein the inorganic particles comprise titanium dioxide,boron nitride, silicon dioxide, barium sulfate or aluminum oxide. 13.The display panel of claim 9, wherein an upper surface of thelight-absorbing layer is substantially coplanar with an upper surface ofthe pixel array.
 14. The display panel of claim 9, wherein thelight-absorbing layer is composed of a colloidal material and aninorganic material, or a colloidal material and an organic material. 15.The display panel of claim 14, wherein the inorganic material is carbonpowder or perovskite.
 16. The display panel of claim 15, wherein thecarbon powder has a specific surface area of 50 m²/g to 70 m²/g.
 17. Thedisplay panel of claim 9, wherein the splicing gap between thesub-display panels is less than 100 μm.
 18. The display panel of claim9, wherein any two adjacent of the pixel array package structures have apitch therebetween.
 19. The display panel of claim 18, wherein the LEDchips in the pixel array package structure are micro LEDs, the pitchbetween the pixel array package structures is less than 0.5 mm.
 20. Thedisplay panel of claim 18, wherein the LED chips in the pixel arraypackage structure are mini LEDs, the pitch between the pixel arraypackage structures is about 0.5 mm to 1.0 mm.